| Type | Transistor Silicon NPN | |
| Case | TO5 | |
| Manufacturer | Raytheon Semiconductor | |
| Vbr CBO | 25 | |
| Vbr CEO | 25 | |
| Max. PD (W) | 300m | |
| C(ob) (F) | 8.0p | |
| Derate (Amb) (W/°C) | 500m | |
| Ic Max. (A) | 50m | |
| Icbo Max. @Vcb Max. (A) | 100n | |
| Polarity | NPN | |
| Oper. Temp (°C) Max. | 175 | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.3 W | |
| Maximum Collector-Emitter Voltage |Vce| | 25 V | |
| Maximum Collector Current |Ic max| | 0.05 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Collector Capacitance (Cc) | 8 pF | |
| Transition Frequency (ft): | 30 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 30 | |
| SKU | 312678 | |