| Type | Transistor Silicon NPN | |
| Case | TO5 | |
| Manufacturer | Raytheon Semiconductor | |
| Vbr CBO | 20 | |
| Vbr CEO | 20 | |
| Max. PD (W) | 300m | |
| C(ob) (F) | 10p | |
| Derate (Amb) (W/°C) | 0.5 | |
| hfe | 10 | |
| Ic Max. (A) | 50m | |
| Icbo Max. @Vcb Max. (A) | 800n | |
| Polarity | NPN | |
| Trans. Freq (Hz) Min. | 20M | |
| @VCE (test) (V) | 6.0 | |
| Oper. Temp (°C) Max. | 175 | |
| @Ic (A) | 1.0m | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.3 W | |
| Maximum Collector-Emitter Voltage |Vce| | 20 V | |
| Maximum Collector Current |Ic max| | 0.05 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Collector Capacitance (Cc) | 4 pF | |
| Transition Frequency (ft): | 20 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 10 | |
| SKU | 312680 | |