The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N2017

2N2017

SKU: 2N2017
2N2017 Transistor Silicon NPN CASE: TO105 MAKE: General Electric
Price:
£4.79 Inc. VAT (£3.99 Ex. VAT)
£4.79 Inc. VAT (£3.99 Ex. VAT)
Qty
  • 2 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2N2017 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO105
Manufacturer General Electric
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 1.0
Max. hFE 200
Min hFE 50
Ic Max. (A) 1.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 10
Derate Above 25°C 28m
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 312746
Back