2DB1182Q
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2DB1182Q

SKU: 2DB1182Q
2DB1182Q Transistor Silicon PNP CASE: TO252 MAKE: Generic
Datasheet
2DB1182Q Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Diodes
Polarity PNP
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 26 pF
Transition Frequency (ft): 110 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 1421416
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