2DI100Z-100
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2DI100Z-100

SKU: 2DI100Z-100
2DI100Z-100 Transistor Silicon NPN CASE: M210 MAKE: Generic
Datasheet
2DI100Z-100 Datasheet
Product specifications
Type Transistor Silicon NPN
Case M210
Manufacturer Fuji Electric
Polarity NPN
Maximum Collector Power Dissipation (Pc) 800 W
Maximum Collector-Base Voltage |Vcb| 1000 V
Maximum Collector-Emitter Voltage |Vce| 1000 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 100 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 342624
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