The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2DI150D-100
View detailed images (1)

2DI150D-100

SKU: 2DI150D-100
2DI150D-100 Transistor Silicon NPN CASE: M207 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case M207
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 1000 W
Maximum Collector-Base Voltage |Vcb| 1000 V
Maximum Collector-Emitter Voltage |Vce| 1000 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 150 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 777584
Back