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2G376
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2G376

SKU: 2G376
2G376 Transistor Germanium PNP CASE: TO1 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO1
Manufacturer Generic
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.0m
hfe 70
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 5.0M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 100
@Ic (A) 100m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 40 pF
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 1246590
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