2H1257

2H1257

SKU: 2H1257
2H1257 Transistor Silicon PNP CASE: TO18 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Generic
Vbr CBO 35
Max. PD (W) 300m
C(ob) (F) 10p
Derate (Amb) (W/°C) 2.0m
hfe 55
Icbo Max. @Vcb Max. (A) 200n
Polarity PNP
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 10i
Oper. Temp (°C) Max. 175
@Ic (A) 2.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 605784
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