2N1000

SKU: 2N1000

2N1000 Transistor Germanium NPN CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO5
Manufacturer	USA Make
Vbr CBO	40
Vbr CEO	25
Max. PD (W)	150m
C(ob) (F)	20p
Derate (Amb) (W/°C)	2.0m
Icbo Max. @Vcb Max. (A)	15u
Polarity	NPN
Trans. Freq (Hz) Min.	7.0M
Oper. Temp (°C) Max.	100
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	40 V
Max. Operating Junction Temperature (Tj)	100 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	6 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	777385

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