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2N1003
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2N1003

SKU: 2N1003
2N1003 Transistor Germanium PNP CASE: TO5 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Motorola Semiconductor
Vbr CBO 35
Vbr CEO 20
Max. PD (W) 120m
C(ob) (F) 5.0p
hfe 10
Icbo Max. @Vcb Max. (A) 15u
Polarity PNP
@VCE (test) (V) 9.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.12 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 553092
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