2N1007

SKU: 2N1007

2N1007 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	25
Vbr CEO	20
Max. PD (W)	35
Max. hFE	250
Min hFE	50
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Derate Above 25°C	500m
Oper. Temp (°C) Max.	95#
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	15 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	95 °C
Transition Frequency (ft):	0.06 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	777384

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