The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1008
View detailed images (12)

2N1008

SKU: 2N1008
2N1008 Transistor Germanium PNP CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Generic
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 300m
Derate (Amb) (W/°C) 2.8m
hfe 40
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 85
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 777383
Back