2N1009

SKU: 2N1009

2N1009 Transistor Germanium PNP CASE: TO5 MAKE: Bendix Corporation

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Bendix Corporation
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	400m#
Derate (Amb) (W/°C)	6.6m
hfe	40
Ic Max. (A)	300m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	7.5k
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	85
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Collector Current \|Ic max\|	0.02 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.4 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	312628

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