2N1010

SKU: 2N1010

2N1010 Transistor Germanium NPN CASE: TO1 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO1
Manufacturer	USA Make
Vbr CBO	10
Vbr CEO	10
Max. PD (W)	20m
Derate (Amb) (W/°C)	667u
hfe	35
Ic Max. (A)	2.0m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Trans. Freq (Hz) Min.	2.0M
@VCE (test) (V)	3.0
Oper. Temp (°C) Max.	55
@Ic (A)	300u
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.02 W
Maximum Collector-Base Voltage \|Vcb\|	10 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.002 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	777369

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