2N1011

SKU: 2N1011

2N1011 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	80
Vbr CEO	40
Max. PD (W)	35
Max. hFE	75
Min hFE	30
Ic Max. (A)	5.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	15m
Polarity	PNP
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	5.0k
Oper. Temp (°C) Max.	95#
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	40 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	95 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	777368

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