2N1012
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2N1012

SKU: 2N1012
2N1012 Transistor Germanium NPN CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium NPN
Case TO5
Manufacturer USA Make
Vbr CBO 40
Vbr CEO 22
Max. PD (W) 150m
C(ob) (F) 20p
Derate (Amb) (W/°C) 2.0m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 100
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 22 V
Maximum Emitter-Base Voltage |Veb| 35 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 180 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 394084
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