2N1014

SKU: 2N1014

2N1014 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	100
Vbr CEO	65
Max. PD (W)	50
t(f) Max. (S)	65u
Max. hFE	50
Min hFE	26
Ic Max. (A)	5.0
@Ic (test) (A)	4.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	PNP
Tr Max. (s)	90u
Derate Above 25°C	666m
Oper. Temp (°C) Max.	100#
@VCE (V)	1.5
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	777365

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