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2N1016D
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2N1016D

SKU: 2N1016D
2N1016D Transistor Silicon NPN CASE: MT38-2 MAKE: Generic
Product specifications
Equivalent 2N1016
Type Transistor Silicon NPN
Case MT38-2
Manufacturer Generic
Vbr CEO 200
Max. PD (W) 150
t(f) Max. (S) 20u
Min hFE 10
Ic Max. (A) 7.5
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 20mѸ
Polarity NPN
R(sat) (Û) 500m
Trans. Freq (Hz) Min. 20k
Oper. Temp (°C) Max. 150
@VCE (V) 4.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 25 V
Maximum Collector Current |Ic max| 7.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 605821
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