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2N1017
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2N1017

SKU: 2N1017
2N1017 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 30
Vbr CEO 10
C(ob) (F) 20p
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 25u
Polarity PNP
Trans. Freq (Hz) Min. 20M-
Oper. Temp (°C) Max. 85
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 24 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 777358
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