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2N1025
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2N1025

SKU: 2N1025
2N1025 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Datasheet
2N1025 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 250m
C(ob) (F) 7.0p
Derate (Amb) (W/°C) 1.6m
hfe 9.0
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 25n
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 40 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 14 pF
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 18
SKU 777351
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