2N1030
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2N1030

SKU: 2N1030
2N1030 Transistor Germanium PNP CASE: TO66 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO66
Manufacturer USA Make
Vbr CBO 50
Vbr CEO 30
Max. hFE 100
Min hFE 50
Ic Max. (A) 15
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 15m
Polarity PNP
Derate Above 25°C 1.2
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 25 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 100 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 777343
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