The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1030A
View detailed images (12)

2N1030A

SKU: 2N1030A
2N1030A Transistor Germanium PNP CASE: TO66 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO66
Manufacturer Generic
Vbr CBO 60
Vbr CEO 30
Max. hFE 100
Min hFE 50
Ic Max. (A) 15
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 15m
Polarity PNP
Derate Above 25°C 1.2
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 25 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 100 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 777342
Back