2N1031
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2N1031

SKU: 2N1031
2N1031 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 50
Vbr CEO 30
Max. PD (W) 90
Max. hFE 60
Min hFE 20
Ic Max. (A) 15
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 15m
Polarity PNP
Derate Above 25°C 1.2
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 25 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 100 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 605826
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