2N1032

SKU: 2N1032

2N1032 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	50
Vbr CEO	30
Max. PD (W)	90
Max. hFE	100
Min hFE	50
Ic Max. (A)	15
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	15m
Polarity	PNP
Derate Above 25°C	1.2
Trans. Freq (Hz) Min.	2.0k
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	25 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	100 °C
Forward Current Transfer Ratio (hFE), MIN	50
SKU	777337

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