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2N1050A
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2N1050A

SKU: 2N1050A
2N1050A Transistor Silicon NPN CASE: TO57 MAKE: Generic
Product specifications
Equivalent 2N1050
Type Transistor Silicon NPN
Case TO57
Manufacturer Generic
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 1.0
Max. hFE 90
Min hFE 30
Ic Max. (A) 500m
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 15u
Polarity NPN
Derate Above 25°C 228m
Trans. Freq (Hz) Min. 75k
Oper. Temp (°C) Max. 200
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 777298
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