2N1052

SKU: 2N1052

2N1052 Transistor Silicon NPN CASE: TO5 MAKE: USA Make

Datasheet

2N1052 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO5
Manufacturer	USA Make
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	600m
Derate (Amb) (W/°C)	3.4m
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Oper. Temp (°C) Max.	200
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	5 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	155 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	100 pF
Transition Frequency (ft):	2 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	605829

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