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2N1053
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2N1053

SKU: 2N1053
2N1053 Transistor Silicon NPN CASE: TO5 MAKE: USA Make
Datasheet
2N1053 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer USA Make
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 600m
C(ob) (F) 50p
Derate (Amb) (W/°C) 3.4m
hfe 35
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Trans. Freq (Hz) Min. 4.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 200m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 135 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 100 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 777295
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