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2N1055
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2N1055

SKU: 2N1055
2N1055 Transistor Silicon NPN CASE: TO5 MAKE: USA Make
Datasheet
2N1055 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer USA Make
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 600m
C(ob) (F) 100p
Derate (Amb) (W/°C) 5.6m
hfe 3.0
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 15u
Polarity NPN
@VCE (test) (V) 20
Oper. Temp (°C) Max. 200
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 160 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 777293
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