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2N1067
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2N1067

SKU: 2N1067
2N1067 Transistor Silicon NPN CASE: TO8 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO8
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 5.0
t(f) Max. (S) 900n
Max. hFE 75
Min hFE 35
Ic Max. (A) 500m
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Tr Max. (s) 1.2u
R(sat) (Û) 10
Derate Above 25°C 33m
Trans. Freq (Hz) Min. 750k
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 0.75 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 777289
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