2N1101

2N1101

SKU: 2N1101
2N1101 Transistor Germanium NPN CASE: TO22 MAKE: USA Make
Product specifications
Type Transistor Germanium NPN
Case TO22
Manufacturer USA Make
Vbr CBO 20
Vbr CEO 15
Max. PD (W) 180m
Derate (Amb) (W/°C) 3.6m
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Trans. Freq (Hz) Min. 10k
Oper. Temp (°C) Max. 75
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.18 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 777267
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