2N1115

SKU: 2N1115

2N1115 Transistor Germanium PNP CASE: R32 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	R32
Manufacturer	USA Make
Vbr CBO	20
Vbr CEO	15
Max. PD (W)	150m
C(ob) (F)	20p
Derate (Amb) (W/°C)	2.5m
Ic Max. (A)	125m
Icbo Max. @Vcb Max. (A)	6.0u
Polarity	PNP
Trans. Freq (Hz) Min.	5.0M
Oper. Temp (°C) Max.	85
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Collector Current \|Ic max\|	0.125 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	777259

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