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2N1116
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2N1116

SKU: 2N1116
2N1116 Transistor Silicon NPN CASE: TO5 MAKE: USA Make
Datasheet
2N1116 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 600m
C(ob) (F) 100p
Derate (Amb) (W/°C) 5.5m
hfe 6.0
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 15u
Polarity NPN
@VCE (test) (V) 200
Oper. Temp (°C) Max. 200
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 120 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 368051
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