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2N1117
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2N1117

SKU: 2N1117
2N1117 Transistor Silicon NPN CASE: TO5 MAKE: TECC
Datasheet
2N1117 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer TECC
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 600m
C(ob) (F) 100p
Derate (Amb) (W/°C) 5.5m
hfe 4.0
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 15u
Polarity NPN
@VCE (test) (V) 20
Oper. Temp (°C) Max. 200
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 100 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 312639
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