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2N1118
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2N1118

SKU: 2N1118
2N1118 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Datasheet
2N1118 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 150m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 1.3m
hfe 30
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 21M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 140
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 140 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 777257
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