2N1118A

SKU: 2N1118A

2N1118A Transistor Silicon PNP CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	25
Vbr CEO	25
Max. PD (W)	150m
C(ob) (F)	6.0p
Derate (Amb) (W/°C)	1.3m
hfe	25
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	18M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	150
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	140 °C
Collector Capacitance (Cc)	12 pF
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	777256

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