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2N1119
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2N1119

SKU: 2N1119
2N1119 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Datasheet
2N1119 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 10
Vbr CEO 10
Max. PD (W) 150m
C(ob) (F) 12p
Derate (Amb) (W/°C) 1.3m
hfe 1.8
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 140
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 10 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 140 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 18
SKU 777255
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