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2N1122
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2N1122

SKU: 2N1122
2N1122 Transistor Germanium PNP CASE: TO23 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO23
Manufacturer Generic
Vbr CBO 12
Vbr CEO 11
Max. PD (W) 25m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 625u
hfe 35
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity PNP
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.025 W
Maximum Collector-Base Voltage |Vcb| 12 V
Maximum Collector-Emitter Voltage |Vce| 11 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 777250
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