2N1123

SKU: 2N1123

2N1123 Transistor Germanium PNP CASE: MT60 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	MT60
Manufacturer	USA Make
Vbr CBO	45
Vbr CEO	40
Max. PD (W)	750m
C(ob) (F)	20p
Derate (Amb) (W/°C)	10m
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	25u
Polarity	PNP
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	100
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.75 W
Maximum Collector-Base Voltage \|Vcb\|	45 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	45 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	100 °C
Collector Capacitance (Cc)	15 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	605835

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