The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1124

2N1124

SKU: 2N1124
2N1124 Transistor Germanium PNP CASE: TO30 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO30
Manufacturer USA Make
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 300m
Derate (Amb) (W/°C) 5.0m
hfe 40
Ic Max. (A) 250m
Icbo Max. @Vcb Max. (A) 75u
Polarity PNP
Trans. Freq (Hz) Min. 400k
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 85
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Emitter-Base Voltage |Veb| 40 V
Maximum Collector Current |Ic max| 0.25 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 777248
Back