2N1125

SKU: 2N1125

2N1125 Transistor Germanium PNP CASE: TO30 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO30
Manufacturer	USA Make
Vbr CBO	40
Vbr CEO	40
Max. PD (W)	300m
Derate (Amb) (W/°C)	5.0m
hfe	50
Ic Max. (A)	250m
Icbo Max. @Vcb Max. (A)	75u
Polarity	PNP
Trans. Freq (Hz) Min.	1.0M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	85
@Ic (A)	500m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	40 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.6 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	777247

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