2N1129

SKU: 2N1129

2N1129 Transistor Germanium PNP CASE: TO30 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO30
Manufacturer	USA Make
Vbr CBO	25
Vbr CEO	25
Max. PD (W)	150m
C(ob) (F)	125p-
Derate (Amb) (W/°C)	2.5m
hfe	190-
Ic Max. (A)	250m
Icbo Max. @Vcb Max. (A)	25u
Polarity	PNP
Trans. Freq (Hz) Min.	750k-
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	85
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector Current \|Ic max\|	0.25 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	80 pF
Transition Frequency (ft):	0.3 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	777245

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