The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1131A
View detailed images (12)

2N1131A

SKU: 2N1131A
2N1131A Transistor Silicon PNP CASE: TO5 MAKE: Microsemi Corporation
Datasheet
2N1131A Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Microsemi Corporation
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 600m
C(ob) (F) 30p
Derate (Amb) (W/°C) 4.0m
hfe 2.5
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 500n
Polarity PNP
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 368052
Back