2N1131L

SKU: 2N1131L

2N1131L Transistor Silicon PNP CASE: TO5 MAKE: Raytheon

Datasheet

2N1131L Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	Raytheon
Vbr CBO	50
Vbr CEO	35
Max. PD (W)	600m
C(ob) (F)	45p
Derate (Amb) (W/°C)	4.0m
hfe	15
Ic Max. (A)	600m
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Trans. Freq (Hz) Min.	50M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	175
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.6 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.6 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	4.5 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	777237

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