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2N1132B
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2N1132B

SKU: 2N1132B
2N1132B Transistor Silicon PNP CASE: TO5 MAKE: Raytheon Semiconductor
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
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Datasheet
2N1132B Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Raytheon Semiconductor
Vbr CBO 70
Vbr CEO 45
Max. PD (W) 600m
C(ob) (F) 30p
Derate (Amb) (W/°C) 4.0m
hfe 3.0
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
@VCE (test) (V) 100
Oper. Temp (°C) Max. 175
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 84333
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