2N1136

SKU: 2N1136

2N1136 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	60
Vbr CEO	40
Max. hFE	100
Min hFE	50
Ic Max. (A)	6.0
@Ic (test) (A)	30
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
Trans. Freq (Hz) Min.	4.0k
Oper. Temp (°C) Max.	100
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	605837

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