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2N1137B
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2N1137B

SKU: 2N1137B
2N1137B Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 100
Vbr CEO 80
Max. hFE 200
Min hFE 100
Ic Max. (A) 6.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 15m
Polarity PNP
Oper. Temp (°C) Max. 100
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 65 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 605839
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