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2N1145
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2N1145

SKU: 2N1145
2N1145 Transistor Germanium PNP CASE: R32 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case R32
Manufacturer USA Make
Vbr CBO 18
Vbr CEO 18
Max. PD (W) 200m
C(ob) (F) 35p
Derate (Amb) (W/°C) 2.0m
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 16u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 100
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.14 W
Maximum Collector-Base Voltage |Vcb| 16 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 777217
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