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2N1155
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2N1155

SKU: 2N1155
2N1155 Transistor Silicon NPN CASE: TO22 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO22
Manufacturer USA Make
Vbr CBO 80
Max. PD (W) 750m
Derate (Amb) (W/°C) 5.9m
hfe 9.0
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 6.0u
Polarity NPN
Oper. Temp (°C) Max. 150
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.75 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 165 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN 9
SKU 777207
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