2N1160

SKU: 2N1160

2N1160 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	80
Max. PD (W)	20
t(f) Max. (S)	10u
Max. hFE	50
Min hFE	20
Ic Max. (A)	7.0
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	8.0m
Polarity	PNP
Tr Max. (s)	10u
Derate Above 25°C	833m
Trans. Freq (Hz) Min.	10k-
Oper. Temp (°C) Max.	95
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	777201

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