2N1162

SKU: 2N1162

2N1162 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Equivalent	2N1162A
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	50
Vbr CEO	25
Max. hFE	65
Min hFE	15
Ic Max. (A)	25
@Ic (test) (A)	25
Icbo Max. @Vcb Max. (A)	15m
Polarity	PNP
Derate Above 25°C	1.2
Trans. Freq (Hz) Min.	1.0k
Oper. Temp (°C) Max.	100
@VCE (V)	1.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	106 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	25 V
Maximum Collector Current \|Ic max\|	25 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	777200

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